@User: I think the binning is wrong. Looks like they have the right widths, e.g., there are bins for W=0.55um on the nFET, and there are long devices that sort of match the decap cells except that the lengths are 1, 2, 4, and 8 microns. Maybe the bins on those devices should be expanded to cover the range that includes the physical layouts in the standard cells. Issues related to modeling problems outside of the bins shouldn't matter much for devices used as decap.