Sir, May I please have help: If we plot V(drain)/i(drain-to-source) for NMOS an inverter with input connected to Vcc and temp varying for -40 to 125C, can it be considered a measure of mobility of its mobility I did that with the following testbench for sky130 1.8v devices and got the following results Similarly, with input 0 I measured drain to source resistance of PMOS With this can I conclude that NMOS mobility decreases with temp (increase in resistance) and PMOS mobility increases with temp (decrease in resistance) Also can the drain currents (v2#branch), be called saturation current of NMOS (1.8V input) and PMOS (0V input) respectively

You can't just measure this current for any input and output voltage. You should measure this with the input and output connected to the same voltage. Preferably short circuited. And there is VT variability with temperature.