Stefan Schippers
01/05/2021, 1:53 PM14685 : m.xm2.msky130_fd_pr__nfet_01v8 net2 g net6 net4 xm2:sky130_fd_pr__nfet_01v8__model l= 1.49999999999999994e-01 w= 1.00000000000000000e+00 nf= 1.00000000000000000e+00 ad= 0.00000000000000000e+00 as= 0.00000000000000000e+00 pd= 0.00000000000000000e+00 ps= 0.00000000000000000e+00 nrd= 0.00000000000000000e+00 nrs= 0.00000000000000000e+00 sa= 0.00000000000000000e+00 sb= 0.00000000000000000e+00 sd= 0.00000000000000000e+00 m= 1.00000000000000000e+00
1. However having these parameters set to zero does NOT mean there are no drain/source to substrate junction diodes, diodes clamping forward bias conditions still exists, however the I/V characteristics are different.
2. Transistor with no area/perimeters set has lower substrate leakage, picture in following post
3. the IV characteristic of the Body terminal when forward biased w.r.t source and drain (set at 0V) is strange: at 27C transistor with no area/perimeters set has higher current, while at 150C it has lower current. I do not understand the reason.