Hi,
I have done DC analysis of NMOS
setup vdd(Vds) = 1.8v, Vgs vary form 0 to 1.8v
1. Width = 40 um, multiplier = 7 and finger = 1 and Length = .5um @1.5 V(Vgs) Ids = 88mA
2. Width = 7 um, multiplier = 40 and finger = 1 and Length = .5um @1.5 V(Vgs) Ids =103.6 mA
supporting doc link click here@Boris Murmann@Tim Edwards please help me in figure out possible reasons
thank you so much @Luis Henrique Rodovalho for the reply
h
Hesham Omran
02/12/2023, 2:17 PM
@Ashutosh Kumar@Luis Henrique Rodovalho
I think the usage of a large no. of bins (with discontinuities at bin boundaries) is an indication of poor device models.
I have used the PDKs of several other fabs and they were way better.
š 1
a
Ashutosh Kumar
02/12/2023, 2:47 PM
Thank you @Hesham Omran for comment. what could be the best practices in this case.
h
Hesham Omran
02/12/2023, 3:23 PM
Nothing special, just:
⢠Take sim results with some more skepticism.
⢠Avoid the false impression that all device models are similar to SKY130.