open-source-silicon.dev

<@U025J6SKFUH> Once you develop the stack on Sonnet could you please share it?

Thanks! If we manage to get something sensible working we'll let you guys know. Any kind of EM solve is going to require dielectric properties as well and those aren't jumping out at me. Are those assumed to be nominal for the various silicon layers?

<@U025J6SKFUH>:  Dielectric constants of all insulation layers are provided on the document that Amro posted.

<@U025J6SKFUH>:  Be aware of one thing in that diagram that is not correct:  SkyWater is not offering a polyimide surface layer in the current version (sky130) of the process, so the layer "PI1" simply isn't there.

<@U016EM8L91B> Sorry, the naming conventions threw us off a bit. My team is not used to looking at the precise material processes used in IC fabrication.

Thanks for the direction. The information in the diagram should be sufficient for our purposes, but we are curious if we managed to work out the notation correctly. Here's what we have so far:
```TOPOX=Top Oxide
PI=Polymide (not there)
TOPNIT=Top Nitride
NILD=??? Interlayer Dielectric
LINT=Local Interconnect Nitride
PSG=Phosphosilicate Glass
FOX=Field Oxide
IOX=Isolation Oxide
SPNIT=Sputtered Nitride```

<@U025J6SKFUH>:  I can only say that I pulled those names out of a file and didn't try to interpret them other than to check the properties they were given in the file, e.g., conformal dielectric.  Some things are not clear to me;  I think that "LINT" merely means "Local INTerconnect dielectric" and "PSG" means "PolySilicon Gate dielectric".  I don't think anything other than the K values really gives any information about the material composition of the dielectric.

Gotcha. We got a bit confused when we couldn't fine the labels in the rest of the documentation, but we're good as it stands. Thanks again!