A bit of a dumb question; but would it be correct to say that a 0.2 V drop across a ReRAM cell in order to perform a read operation? My current project has been using a TIA that was designed with a Vcm bias of 1.2 V. This wouldn't work with our crossbar architecture of parallel BL and SL lines since current would float upwards through the BL instead of SL. I figured that perhaps if we used a read voltage of 1.4 V, the drop across the ReRAM cell would still be 0.2 V during reads. This doesn't seem to work as expected in Xschem - but I'm not very confident as in why. I've attached an image of two waveforms for a 1T1R run through a sequence of Form, Reset, Set, and Read. The one on the right is the conventional 0.2 V read with a grounded SL which produces the expected 18.06 uA on the SL line. The one on the left is the 1.4 V read with 1.2 V on the SL which produces 18.03 nA on the SL line. I've attached some images of our circuits if that helps at all.