open-source-silicon.dev

Does this process have isolated NMOS devices? I saw it has deep nwell layer in the model files, but I'm not sure about transistors.

```*******************************************************************************
* Document No.      : YI-141-SM064
* Revision          : 9
* Process Name      : 0.18um 3.3V/6V high voltage MCU process 
* Process ID        : TH18300G0A-PID007347
*					  TH18300G1A-PID007352
*					  TH183G0G6A-PID009507
*					  TH18300G7A-PID009628
*					  TH18300G4A-PID009792
*					  TH18300G9A-PID010186
* Wafer ID          : GT3512K wf#02 (3.3V NMOS, 6.0V NMOS, 6.0V native NMOS and NMOSCAP) 
*                     GT3512K wf#06 (3.3V PMOS, 6.0V PMOS, PMOSCAP and BJT)
*                     GT9755L wf#18 (PWELL/DNWELL and DNWELL/Psub diode, Vertical NPN)
*                     JT1042L01 (6V NMOS L=0.6um) 
*                     TCXN39W20 W#4 schottky diode```
<https://github.com/google/globalfoundries-pdk-libs-gf180mcu_fd_pr/blob/e1b4e187900370103bf9b8a22bb8625f883368ef/models/ngspice/sm141064.ngspice>

Like the SkyWater sky130 process, you can put transistors in deep n-well, but they don't have a separate model for such devices.

<@U01QTMG2K8R> Yes it has. You could isolate an NMOS in deep N well