hi, suppose one designs a common source amplifier using nfet and a diode connected pfet for a particular gain with all the device parameters such as transconductance, mobility ,oxide capacitance etc are given. Here, by designing the amp, one basically finds out the value of W with L being specific to the technology. So while designing layout we can only set the value of W and L of polysilicon . Then how does one go about setting the dimensions of ndiffision, pdiffusion, nwell, pwell etc? Also when local interconnect from the gate has to be connceted to the analog pin of user wrapper, how much area should be maintained for local interconnect such that the applied signal at the analog pin reaches the input gate of amp without significant attenuation? could anyone give suggestions on this?