At a first glance, we do not have facilities to characterize devices at IC level, so I suppose, that the high-frequency issues we will encounter due to the laboratory instruments (like scope probe capacitance) we have. However, we are in contact with some centers that do have such capabilities, so we would like to know the best design practices in order to balance our decisions. I think that doing the first iteration, the DC of the photo diode would be a good idea and if we can observe the dynamic behavior of those devices would be even better, but it seems way more difficult.