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<@U01EK2VDMDG> I already tried to download and include it but he says he couldn't find .lib sm141064!

<@U039ST4BD9U> Please use `.lib` with `sm14064.ngspice` instead of `.include` 
Also, use the corner that you want to simulate with (`typical`, `ff`, `ss`, .. etc.) in the same line after `sm14064.ngspice`
```.lib C:\folder\folder\sm14064.ngspice typical```

<@U031GJZKSJX> now it worked thanks!
if you don't mind i have two questions:
1-Are the devices in GF 180nm is binning models or continous models ?
2- How i could find calculation of parameters of devices like as, ad... in terms of W and L to use it ?

also where i can definitions of those parameters like par, sab ?

<@U039ST4BD9U> you are welcome :)
1. MOSFET devices are binning models, you can search inside the model card for a name of device and you will find sections with the same name followed by a number of the bin `nmos_3p3.0`,  `nmos_3p3.1`,  ..etc
2. You can use `xschem` schematic tool to draw a single device then generate netlist from it. you will find equations in front of each parameter so you can calculate most of the parameters depending on W, L, and number of fingers.
3. Currently, there isn't any documentation about parameters definition because it's still in development. However, for your specific question, `par` means number of parallel devices. `s_sab` and `d_sab` mean the portion of source/drain that has salicide block (sab) which mean the length of un-salicided source/drain in the direction of length of diffusion (perpendicular to the gate width direction). 