Hello, We intend to isolate nfets using deep N wel...
# ieee-sscs-dc-22
a
Hello, We intend to isolate nfets using deep N well and would like to simulate the parasitic diodes. We found a model called nfet_20v0_nvt__parasitic__diode_ps2dn. Is it the right one? @Tim Edwards Are there other groups simulating these diodes? What model are you using?
t
That's the right model. I haven't tried using it in a simulation.
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w
One thing to take into account if you are using the models for power conversion is that none of the diode models in the PDK simulate reverse recovery.
j
hello @Weston Braun, can you elaborate a bit more on this? did you observe any issues related to this recovery in your design? what to do to model it?
w
Whoops, missed this message. Sorry. I tried to measure the reverse recovery on my taped out IC to derive values to use in simulation but I was not able to get good results due to the limited bandwidth of my test setup
in power electronics reverse recovery is the main way that diodes can cause issues. Along with latchup its the main concern with the body diode conducting.
Its sorta modeled in spice. The parameter is just set to zero.
I think you can approximate what the recovery time/charge should be based on the doping of the diode?
j
thanks for sharing this info @Weston Braun