Hi everyone! My senior design team and I are attempting to create a ReRAM crossbar using the SkyWater 130 nm pdk. We are hoping to be able to do MAC, read, and write computations on this crossbar. Our planned design is similar to the one seen in the figure below. I think I know how to perform writes based of the SkyWater ReRAM documentation. However, we are currently stuck on figuring out how to perform MAC computations and then read the results on a 1T1R cell. The literature we’ve read has talked about the results of these computations but not the tests that were done to achieve these results. So I have a few questions. If it is possible to do these computation with the model provided, what value voltages should be applied to the word line, select line, and bit line (and for how long) of a 1T1R cell to perform the MAC computation? And then, how would I go about reading the results of this computation? Any help would be much appreciated. Thanks!

@Joshua Thater You’re using a 1.8V transistor. ReRAM has to be initialized with 3.3V, right?

I believe you're right, I forgot to check that when I put the device together just now. Good catch