Hi everyone, recently, I was able to do a ReRAM simulation using NGSpice thanks to the updated symbol from Barak Hoffer. I am now trying to test write/read operations on a 1T1R cell, but I am confused about how to set up a test bench on how to do this. I think I know how to do the write operations by using the information provided in the table on the ReRAM documentation for the Skywater process. However, I am unsure of how to verify if the write was successful or how to read the results out of the 1T1R cell. Any help would be greatly appreciated. Thanks!

If you are doing a transient simulation you could connect a PWL source that applies a low voltage pulse (like 10mv) and then a write pulse and then another low voltage pulse. If you plot the current during the pulses, the current during the first low voltage pulse should be different than the second low voltage pulse indicating that the state of the ReRAM has changed.

Sorry, didn't see this reply. Should I apply the low voltage pulses at each terminal of the 1T1R cell (like the write line, bit line and source line)? Then I assume I should observe the current at the TE of the ReRAM cell? Thanks for the reply!

if you have a single 1T1R I think you could just keep the one connected to the gate of the transistor (I think wordline) at 1.8V. The current going in/out of the TE should work.

Sounds good. I'll give this a try