Hello together, We are currently looking at the gf180 pdk as an alternative for a project. Since we are doing rather high voltage design, we use the 10 V transistors of the pdk. Now we are wondering if there is any data on the performance of the DNWELL-to-subtrate diode of the LDPMOS. Has anyone measured measured breakdown voltage of the well towards substrate? Warm regards, JP

@Farag Elsayed Could you confirm if we have a model for this device?

For GF180MCU, No we don't have a model for it

10V device we don’t have model? What about dnwell diode?

Here are diodes in MCU _* diode_nd2ps_03v3 Model for 3.3V N+/Psub diode_ _* diode_pd2nw_03v3 Model for 3.3V P+/Nwell diode_ _* diode_nd2ps_06v0 Model for 6.0V N+/Psub diode_ _* diode_pd2nw_06v0 Model for 6.0V P+/Nwell diode_ _* diode_nw2ps_03v3 Model for 3.3V Nwell/Psub diode_ _* diode_nw2ps_06v0 Model for 6.0V Nwell/Psub diode_ _* diode_pw2dw Model for PWELL/DNWELL diode_ _* diode_dw2ps Model for DNWELL/Psub diode_ _* sc_diode Model for Schottky Diode_

diode_dw2ps is what we are looking for

Plots could be generated using testbench we have, but I'm not sure if ngspice will model breakdown correctly. Related to 10V devices, we don't have any models for them in MCU.

I know there is an issue with break down in NGSpice

I will check that

Could you generate that and share it here?

I found some plots in this sheet for some variations

Hey, this seems to be right! Thank you very much! You can do some real HV stuff with this technology.

@Joe Phisch Keep in mind that NGSPICE doesn’t model the diode breakdown properly

@Joe Phisch @Amro Tork 10v FETs will be updated and tested for MCU soon to be available for usage.