@User The area of a nand gate is typically tranformed to a value xxx kgates/mm2. For 0.13um 200-300kgates/mm2 seems good values. Sometimes a difference is made between raw gate density and effective gate density where raw is based directly on area of NAND2 and effective taking into account the overhead needed for P&R. The latter is not fixed as it depends on the design and the P&R flow used. For comparison I think it is also good to give the highest metal layer used in the cells. AFAICS the OSU seem to use metal1 for internal cell routing as the SkyWater libs only use metal1 for the power rails. This is important to estimate the overhead needed for P&R.