I would like a 2nd opinion on my observation that SkyWater's subcircuit model for the n-diffusion resistor

sky130_fd_pr__res_generic_pd

is wrong. The device subcircuit splits the device in half and puts one diode on each terminal, representing half the device. The diode used is

sky130_fd_pr__model__ parasitic__diode_ps2nw

. According to the nomenclature used, this should be the diode from p-substrate to n-well. If we have converted the parasitic diode models correctly, then I believe this device should be

sky130_fd_pr__diode_pd2nw_05v5

, which would be the parasitic diode from pdiffusion to nwell, and would be the correct correllary to the

sky130_fd_pr__res_generic_nd

subcircuit model (which appears to be correct). Since both are just diode models, the only way to tell which is which is to figure out if the model parameters look right.

As laid out, this logic all flows