<#299 Concern about the layout of the bipolar tran...
# ihp-sg13g2
g
#299 Concern about the layout of the bipolar transistors Issue created by RTimothyEdwards The only visibility I have for the bipolar transistor layouts is in the primitive device library (pycells). (i.e., there is no QA library layout for these devices, and the documentation shows only a cross section view.)\n\nI have a few concerns about these devices, especially related to the inconsistencies between the layouts of the device types.\n\nThe base type of NPN transistor
npn13G2
does not have a contact over the emitter window. Both of the other NPN transistor types have a contact over the emitter window.\n\nThe base type
npn13G2
has no diffusion under the base. There is only an nSD.block layer, with the contact otherwise sitting over nothing but substrate. This may be intentional (since parts of the device are obfuscated in the the open source PDK view) but looks odd.\n\nThe
npn13G2L
has square contact cuts over the base but a contact bar over the collector, whereas the
npn13G2V
has square contact cuts over both the base and the collector. This may be intentional but seems odd. IHP-GmbH/IHP-Open-PDK