#291 DRC Validation cells errata Issue created by RTimothyEdwards @Krzysztof Herman , @sergeiandreyev , et al., Here's a list of things I came across while working on the tech file for magic for IHP s13g2. It is just a dump of things I found, mostly minor, and I have not looked through the issues list to see if any of them have already been reported. In the DRC validation GDS library: 1. The "ActivFiller" cell has text "PASS ... PASS" instead of "PASS ... FAIL" 2. The "TopMet2Filler" cell has text "TM1" on all the rule numbers. 3. The Thick Oxide devices in the "thickgateox" cell fail the minimum gate length rule. 4. The same problem with (3) above is also in the "gatpoly" cell for rule Gat.a3 and Gat.a4. The error shows up on the "pass" side, so the validation cells seem to assume that minimum gate length for a thick oxide device is 0.33um, which is in direct contravention to the documentation, which says that a thick gate oxide device minimum length is 0.4um for pFETs and 0.45um for nFETs. 5. Additionally, layouts for rules Gat.a2 and Gat.a4 show transistors formed from poly on P+ diffusion not in nwell; this forms a p-type varactor device, but no model exists in the PDK for such a device. 6. Layouts for rules Gat.c and Gat.d appear to be incorrectly using GatPoly.filler instead of GatPoly. The combination of GatPoly.filler over Activ (non-filler) should not be legal. 7. The "passiv" cell shows passivation over both metal7 and over metal6. The metal6 use case is not documented in the SG13G2_os_layout_rules.pdf file. I do not know if this use case is valid. 8. There is no layout for pSD rules, which is a large set of needed validation examples. Documentation (SG13G2_os_layout_rules.pdf): 1. The Rsil.d rule illustration is wrong in SG13G2_os_layout_rules.pdf; the rule specifies distance from pSD to GatPoly but the dimension illustrated is pSD to EXTblock. In the sg13g2_pr.gds library: 1. There is no marker layer for PNP. This makes it impossible for a tool to distinguish it as a device as opposed to just a piece of diffusion surrounded by a double guard ring. 2. The p-diode (dpantenna) has no nwell drawn underneath, which makes it, as drawn, a substrate tap and not a diode. In the standard cell library: 1. Cell "sg13g2_a21o_1" has been incorrectly named "sg13gs_a21o_1" ("gs" instead of "g2") in the GDS. <--- (Edit: This has to be something I did; I don't remember doing anything with this cell but I must have copied it with a typo because it showed up in my cell list. Sorry for the false positive.) IHP-GmbH/IHP-Open-PDK