The one thing that came to my mind was to make a ring oscillator with nFET only and pull-up resistors, and another one with pFET only and pull-down resistors. But then that would involve resistor variation.
Possibly you could make one nMOS-only ring oscillator, one pMOS-only, and one CMOS. Then you have three measurements for three independent variables (N-corner, P-corner, and R-corner) and can tease them apart.