How well-modeled is NMOS with -10mV &lt;= V_DS &lt;= 10mV? In the <raw data>, it seems the smallest ...
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How well-modeled is NMOS with -10mV <= V_DS <= 10mV? In the raw data, it seems the smallest V_DS step they do is 50mV, but maybe the theory is good enough to make up for this?