Short question about the LDO: Do we need to simulate transient behavior with an actual pulsed current load and do we include the bondwire inductance and resistance - or is that not required for this case?

This LDO is exclusively for the bandgap, so there should be very little change in current load. Bondwire inductance and resistance is probably not required, but if so, I will need to work up a more accurate bonding diagram for the final chip design.

Thanks! Also - are there far fewer types of pmos available under sky130b or did I miss something during the installation? In particular, I cant see a pmos counterpart to the 3.3V svt nmos, to name one example. The doc folder in the pdk contains svg files of the pcells but is there a complete list of all pcells (and also std cells) somewhere in the installation hierarchy?

Maybe you missed something? The number of devices in sky130B is exactly one more than the number of devices in sky130A (it adds the ReRAM device).

So, there is a pcell called nfet_03v3_nvt. I suppose this is a 3.3V normal vt nmos. There is no direct pmos counterpart of this - with the same suffix (at least this is how most tsmc libs have it, so maybe I am a little biased there :) ). The closest I could find was pfet_g5v0d16v0, which I think is a 5V pmos, but basically I am looking for a 3.3v svt pmos.

@Ugur Yegin If I remember correctly, there is no 3.3V pmos in the sky130 pdk. However, you can use the 5V pmos for 3.3V circuits.

@Ugur Yegin: You want the

pfet_g5v0d10v0

and

nfet_g5v0d10v0

(not the

0d16v0

which is a 16V device). These are the thick oxide devices that are normally used for 3.3V operation, although they are 5V tolerant. Most of the IP has been specified for operation from 3.3V to 5.5V, which anticipates the use of these devices.

@Ugur Yegin FWIW,

nfet_03v3_nvt

is native Vth not normal Vth. I don’t think normal Vth devices have a suffix on the model name.

The native device is constructed by blocking out all VT implants.