means "drain side (un?)salicided" or something like that. The drain side diffusion has a salicide block on it which makes it a diffusion resistor between the contact and the gate. Not quite the same thing as an extended drain, but similar. I've also seen that done with two separate devices (a transistor and diffusion resistor), but by abutting the salicide block to the FET gate, it becomes effectively a single device.
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