@Tim Edwards since you are online, I take the opportunity to ask you about diodes: we need a diode for a floating gate power level shifter, I'm using a single element of diode_pw2nd_05v5 with default area 1e-12, but I'm wondering about the current allowed, is it simply defined by the metallization? or should I better put several of these in parallel for mA-level currents and current peaks?

ESD diodes are meant to take hundreds of milliamps current and are typically five or six fingers of diffusion 10um or more in length. I would definitely go for something larger than the default. The p-n junction is under the diffusion, so making the device larger is just as effective as placing multiple devices.

hello @Tim Edwards, I'm checking the diode element and the default area seems to be huge (1e12), is this correct?

Yes, the diode area is correct. There are some long discussions about this elsewhere, either in this channel or in #xschem . Without a doubt, the area and perimeter units of level 3 diodes in the SkyWater models are just weird. For the diode: Create a test layout. Generate a diode 12.7um x 12.7um. Extract it. Copy the resulting area and perimeter into the schematic.

ok, got it! thanks 🙂