Please pay attention. When saving the FET drain currents these are saved with names like

i(@m.xm1.msky130_fd_pr__nfet_g5v0d10v5[id])

in the raw file. However these currents shoud more appropriately be defined as the source current. At high voltage operating conditions, where injection of carriers into the substrate occurs the drain current should be the sum of Ids + Idb , however as you can see this is not the case. I usually place ammeters in series to the device branches I want to monitor, and seems this is a good choice, otherwise if you look at the

i(@m...[id])

current you may not notice you are destroying a device due to substrate injection.